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PBYL1625 SP3481EN X3402 BYT78 00020 B1233 P7N60C3 HMC341
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  2N3634 2n3635 silicon pnp transistors description: the central semiconductor 2N3634 and 2n3635 are silicon pnp epitaxial planar transistors designed for general purpose switching and amplifier applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 140 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.0 a power dissipation p d 1.0 w power dissipation (t c =25c) p d 5.0 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 175 c/w thermal resistance jc 35 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =100v 100 na i ebo v eb =3.0v 50 na bv cbo i c =100a 140 v bv ceo i c =10ma 140 v bv ebo i e =10a 5.0 v v ce(sat) i c =10ma, i b =1.0ma 0.3 v v ce(sat) i c =50ma, i b =5.0ma 0.5 v v be(sat) i c =10ma, i b =1.0ma 0.8 v v be(sat) i c =50ma, i b =5.0ma 0.65 0.9 v f t v ce =30v, i c =30ma, f=100mhz (2N3634) 150 mhz f t v ce =30v, i c =30ma, f=100mhz (2n3635) 200 mhz c ob v cb =20v, i e =0, f=1.0mhz 10 pf c ib v eb =1.0v, i c =0, f=1.0mhz 75 pf nf v ce =10v, i c =0.5ma, r s =1.0k, f=1.0khz 3.0 db t on v cc =100v, v be =4.0v, i c =50ma 400 ns t off i b1 =i b2 =5.0ma 600 ns to-39 case r1 (17-september 2013) www.centralsemi.com
2N3634 2n3635 silicon pnp transistors to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) 2N3634 2n3635 symbol test conditions min max min max h fe v ce =10v, i c =0.1ma 40 - 80 - h fe v ce =10v, i c =1.0ma 45 - 90 - h fe v ce =10v, i c =10ma 50 - 100 - h fe v ce =10v, i c =50ma 50 150 100 300 h fe v ce =10v, i c =150ma 25 - 50 - h fe v ce =10v, i c =10ma, f=1.0khz 40 160 80 320 www.centralsemi.com r1 (17-september 2013)


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